KOSTUR, VN (1992) ELECTRON RAMAN-SCATTERING IN METALS WITH STRONG ELECTRON-PHONON COUPLING. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 89 (2). pp. 149-159. ISSN 0722-3277,
Full text not available from this repository.Abstract
Inelastic light scattering by the carriers interacting with phonons in the anisotropic metals with large penetration depth is theoretically studied. It is shown that the strong temperature dependence of the Raman scattering intensity in the region of phonon frequencies is the main characteristic feature of these processes. The effects of anisotropy, impurities and the strength of electron-phonon interaction on the frequency and temperature dependences of the polarization operator are analysed. Taking into account the anisotropy vertex corrections which obey a system of the Boltzman-type integral equations should leads to the considerable changes of the frequency behavior of scattering cross section for low frequencies. However, the changes of the temperature dependence are not so drastic. Increasing the electron-phonon coupling constant lambda affects the particle-hole polarization operator in two possible ways to weaken temperature dependence and to make flatter frequency curves. The same effects are also from impurities. Some theoretical consequences which concern the role of electron-phonon interaction for electron Raman scattering in high-T(C) superconductors above T(c) are proposed.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HIGH-TC SUPERCONDUCTORS; INFRARED CONDUCTIVITY; GAP; NB3SN; V3SI; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54327 |
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