LINK, P and SCHMIDT, T and BAUER, S and WAGNER, HP and LEIDERER, H and GEBHARDT, W (1992) CHARACTERIZATION OF HOT WALL EPITAXY GROWN ZNTE LAYERS. JOURNAL OF APPLIED PHYSICS, 72 (8). pp. 3730-3734. ISSN 0021-8979,
Full text not available from this repository.Abstract
Single cyrstalline ZnTe layers have been successfully grown on (001) GaAs substrates by hot wall epitaxy at substrate temperatures between 280-370-degrees-C. The vapor phase near the substrate surface was investigated by a quadrupole mass spectrometer. Transmission electron microscopy, reflectivity, and photoluminescence were used for growth optimization, impurity identification, and strain determination. The biaxial inplane strain is about epsilon parallel-to = -0.5% at the interface and epsilon parallel-to (320-degrees-C) = -0.06% at the surface for thicknesses of 1-5 mum. Two luminescence peaks can be assigned to As and N.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | THIN-FILMS; SUPERLATTICES; ZNSE; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54333 |
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