KUHN, W and NAUMOV, A and STANZL, H and BAUER, S and WOLF, K and WAGNER, HP and GEBHARDT, W and POHL, UW and KROST, A and RICHTER, W and DUMICHEN, U and THIELE, KH (1992) LOW-TEMPERATURE MOVPE GROWTH OF ZNSE WITH DITERTIARYBUTYLSELENIDE. [["eprint_typename_letter" not defined]]
Full text not available from this repository.Abstract
The results on the synthesis of the selenium alkyl ditertiarybutylselenide and its application in atmospheric pressure MOVPE are presented. In combination with dimethylzinc-triethylamine, single crystalline ZnSe layers were grown on GaAs at temperatures lower than 350-degrees-C. Good morphology, crystalline and interface quality are demonstrated by optical and electron microscopy, X-ray diffraction and Raman spectroscopy. Photoluminescence at 2 K reveals chlorine as an impurity. The electron mobility of 500 cm2/V.s at room temperature supports a fairly low compensation.
| Item Type: | ["eprint_typename_letter" not defined] |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; INTERFACE; GAAS; MOCVD; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54358 |
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