WAGNER, HP and LANKES, S and WOLF, K and LICHTENBERGER, D and KUHN, W and LINK, P and GEBHARDT, W (1992) RESONANT EXCITATION OF INTRINSIC AND SHALLOW TRAP LUMINESCENCE IN MOVPE GROWN ZNTE LAYERS. JOURNAL OF LUMINESCENCE, 52 (1-4). pp. 41-53. ISSN 0022-2313,
Full text not available from this repository.Abstract
We present high resolution spectra of excitons, shallow donors and acceptors in ZnTe epilayers grown on GaAs and GaSb by atmospheric pressure metal-organic vapor-phase epitaxy (MOVPE). Resonant excitation made the observation of selective-pair luminescence (SPL), two-electron transitions (TET) and two-hole transitions (THT) possible. The investigation of donor states in I-doped layers yields m(e)* = 0.117m0 and a static dielectric constant epsilon(st) = 9.4. The Luttinger parameter gamma-1 = 3.8 was obtained from 1s- and 2s-free exciton transitions. As-acceptor states were observed in strain-free layers. A fit to calculations of Baldareschi and Lipari leads to gamma-2 = 0.72 and gamma-3 = 1.3. Level shift and splitting in magnetic fields corroborated the present assignments. The magnetic parameters kappa(A) = -0.27 and q(A) = -0.015 were obtained from As-acceptor bound excitons and the first excited acceptor state.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | VALENCE-BAND PARAMETERS; PURITY ZINC TELLURIDE; ACCEPTOR STATES; FREE-EXCITON; SPHERICAL MODEL; BOUND-EXCITON; ENERGY-LEVELS; SEMICONDUCTORS; DONOR; GAAS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54517 |
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