WENG, J and HOLZ, J and MEISTER, TF (1992) NEW METHOD TO DETERMINE THE BASE RESISTANCE OF BIPOLAR-TRANSISTORS. IEEE ELECTRON DEVICE LETTERS, 13 (3). pp. 158-160. ISSN 0741-3106,
Full text not available from this repository.Abstract
A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance R(Btot) has been directly measured and then separated into its components, external and internal base resistances, R(Bext) and R(Bint), respectively. The sheet resistance R(pi) for the internal base region can be estimated for a base-emitter voltage range of practical interest. Finally, an accurate estimation of the base resistance of advanced bipolar transistors under high forward-bias conditions is demonstrated.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54619 |
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