LEIDERER, H and JAHN, G and SILBERBAUER, M and KUHN, W and WAGNER, HP and LIMMER, W and GEBHARDT, W (1991) INVESTIGATION OF STRAIN IN METALORGANIC VAPOR-PHASE EPITAXY GROWN ZNTE LAYERS BY OPTICAL METHODS. JOURNAL OF APPLIED PHYSICS, 70 (1). pp. 398-404. ISSN 0021-8979,
Full text not available from this repository.Abstract
We have studied the strain in ZnTe epilayers grown by atmospheric-pressure metalorganic vapor-phase epitaxy on (001) GaAs and GaSb substrates. Reflectivity and absorption measurements are performed at 2 K using single-crystalline layers with thicknesses of 0.2-2 mu-m. The biaxial strain in the samples caused by the lattice mismatch of layer and substrate is deduced from the splitting of the degenerate heavy- and light-hole exciton. A polariton model is used to describe the reflectivity structure at the E0 gap and to determine the transverse exciton energies. The deformation potentials obtained from an analysis of the absorption structures are a = -5.5 eV and b = -1.4 eV. The critical thickness for ZnTe/GaSb is lower than 0.8-mu-m near thermodynamic equilibrium. It also slightly depends on growth temperature which has its optimum at 345-degrees-C.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CRITICAL THICKNESS; 100 GAAS; PHOTOLUMINESCENCE; STRESS; HETEROSTRUCTURE; SEMICONDUCTORS; RELAXATION; ABSORPTION; CONSTANTS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:46 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54963 |
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