BRANDL, A and PRETTL, W (1991) CHAOTIC FLUCTUATIONS AND FORMATION OF A CURRENT FILAMENT IN N-TYPE GAAS. PHYSICAL REVIEW LETTERS, 66 (23). pp. 3044-3047. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
A novel nonlinear model is presented for the occurrence of current fluctuations at low temperatures in extrinsic semiconductors. It is based on impact ionization of shallow impurities and structure-forming processes leading to a current filament. Numerical investigations reproduce the current-voltage characteristics and reveal regular, quasiperiodic, and frequency-locked spontaneous current oscillations and a Ruelle-Takens-Newhouse transition to chaos in agreement with experimental observations in n-type GaAs.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | IMPACT IONIZATION; OSCILLATIONS; GE; SEMICONDUCTORS; TRANSITION; BREAKDOWN; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:46 |
| URI: | https://pred.uni-regensburg.de/id/eprint/54981 |
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