Electron energy relaxation under terahertz excitation in (Cd1-xZnx)(3)As-2 Dirac semimetals

Galeeva, Alexandra V. and Krylov, Ivan V. and Drozdov, Konstantin A. and Knjazev, Anatoly F. and Kochura, Alexey V. and Kuzmenko, Alexander P. and Zakhvalinskii, Vasily S. and Danilov, Sergey N. and Ryabova, Ludmila I. and Khokhlov, Dmitry R. (2017) Electron energy relaxation under terahertz excitation in (Cd1-xZnx)(3)As-2 Dirac semimetals. BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 8. pp. 167-171. ISSN 2190-4286,

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Abstract

We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd1-xZnx)(3)As-2. We performed a study on a range of (Cd1-xZnx)(3)As-2 mixed crystals undergoing a transition from the Dirac semimetal phase with an inverse electron energy spectrum to trivial a semiconductor with a direct spectrum in the crystal bulk by varying the composition x. We show that for the Dirac semimetal phase, the photo-electromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the laser pulse power, irrespective of wavelength. We assume that such behavior is attributed to a strong damping of the interelectron interaction in the Dirac semimetal phase compared to the trivial semiconductor, which may be due to the formation of surface electron states with a spin texture in Dirac semimetals.

Item Type: Article
Uncontrolled Keywords: TOPOLOGICAL CRYSTALLINE INSULATORS; TUNNELING IONIZATION; FIELDS; RADIATION; CENTERS; STATES; CD3AS2; PHASE; Dirac semimetal; photo-electromagnetic effect; terahertz radiation; topological insulator
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Dec 2018 13:01
Last Modified: 27 Feb 2019 16:23
URI: https://pred.uni-regensburg.de/id/eprint/553

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