Light-field-driven electronics electronics in the mid-infrared regime: Schottky rectification

Schlecht, Maria T. and Knorr, Matthias and Schmid, Christoph P. and Malzer, Stefan and Huber, Rupert and Weber, Heiko B. (2022) Light-field-driven electronics electronics in the mid-infrared regime: Schottky rectification. SCIENCE ADVANCES, 8 (22): eabj5014. ISSN 2375-2548,

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Abstract

The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and almost-transparent Schottky diode. The usually dominant forward direction is suppressed, but a characteristic signal occurs in reverse bias. For its theoretical description, we consider tunneling through the light-field-modulated Schottky barrier, complemented by a dynamical accumulation correction. On the basis only of the DC parametrization of the diode, the model provides a consistent and accurate description of the experimentally observed infrared phenomena. This allows the conclusion that cycle-by-cycle dynamics determines rectification. As the chosen materials have proven capabilities for transistors, circuits, and even a full logic, we see a way to establish light-field-driven electronics with rapidly increasing functionality.

Item Type: Article
Uncontrolled Keywords: ATTOSECOND CONTROL; PHOTOEMISSION; TRANSPORT; CURRENTS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Feb 2024 10:36
Last Modified: 01 Feb 2024 10:36
URI: https://pred.uni-regensburg.de/id/eprint/57723

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