Scattering anisotropy in HgTe (013) quantum well

Khudaiberdiev, D. A. and Savchenko, M. L. and Kozlov, D. A. and Mikhailov, N. N. and Kvon, Z. D. (2022) Scattering anisotropy in HgTe (013) quantum well. APPLIED PHYSICS LETTERS, 121 (8): 083101. ISSN 0003-6951, 1077-3118

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Abstract

We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions [100] and [03 (1) over bar] as the electron density function n. The anisotropy is absent at the minimal electron density near a charge neutrality point. The anisotropy increases with the increase in n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase in the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason for such a strong change in the anisotropy remains unknown. Published under an exclusive license by AIP Publishing.

Item Type: Article
Uncontrolled Keywords: MOBILITY;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Feb 2024 09:54
Last Modified: 01 Feb 2024 09:54
URI: https://pred.uni-regensburg.de/id/eprint/57961

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