Wu, Si-Si and Huang, Teng-Xiang and Xu, Xiaolan and Bao, Yi-Fan and Pei, Xin-Di and Yao, Xu and Cao, Mao-Feng and Lin, Kai-Qiang and Wang, Xiang and Wang, Dongdong and Ren, Bin (2022) Quantitatively Deciphering Electronic Properties of Defects at Atomically Thin Transition-Metal Dichalcogenides. ACS NANO, 16 (3). pp. 4786-4794. ISSN 1936-0851, 1936-086X
Full text not available from this repository. (Request a copy)Abstract
Defects can locally tailor the electronic properties of 2D materials, including the band gap and electron density, and possess the merit for optical and electronic applications. However, it is still a great challenge to realize rational defect engineering, which requires quantitative study of the effect of defects on electronic properties under ambient conditions. In this work, we employed tip-enhanced photoluminescence (TEPL) spectroscopy to obtain the PL spectra of different defects (wrinkle and edge) in mechanically exfoliated thin-layer transition metal dichalcogenides (TMDCs) with nanometer spatial resolution. We quantitatively obtained the band gap and electron density at defects by analyzing the wavelength and intensity ratio of excitons and trions. We further visualized the strain distribution across a wrinkle and the edge-induced reconstructive regions of the band gap and electron density by TEPL line scans. The doping effect on the Fermi level and optical performance was unveiled through comparative studies of edges on TMDC monolayers of different doping types. These quantitative results are vital to guide defect engineering and design and fabrication of TMDC-based optoelectronics devices.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SINGLE-LAYER MOS2; HYDROGEN EVOLUTION; CATALYTIC-ACTIVITY; MONOLAYER MOS2; PHOTOLUMINESCENCE; BILAYER; STATES; TIP; transition-metal dichalcogenides; tip-enhanced photoluminescence; defects; exciton; doping; strain |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Feb 2024 07:07 |
| Last Modified: | 02 Feb 2024 07:07 |
| URI: | https://pred.uni-regensburg.de/id/eprint/58276 |
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