Eberle, Franz and Schuh, Dieter and Gruenewald, Benedikt and Bougeard, Dominique and Weiss, Dieter and Ciorga, Mariusz (2023) Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor. NANO LETTERS, 23 (11). pp. 4815-4821. ISSN 1530-6984, 1530-6992
Full text not available from this repository. (Request a copy)Abstract
Electrically controlled rotation of spins in a semiconductingchannelis a prerequisite for the successful realization of many spintronicdevices, like, e.g., the spin-field-effect transistor (sFET). To date,there have been only a few reports on electrically controlled spinprecession in sFET-like devices. These devices operate in the ballisticregime, as postulated in the original sFET proposal, and hence needhigh SOC channel materials in practice. Here, we demonstrate gate-controlledprecession of spins in a nonballistic sFET using an array of narrowdiffusive wires as a channel between a spin source and a spin drain.Our study shows that spins traveling in a semiconducting channel canbe coherently rotated on a distance far exceeding the electrons'mean free path, and spin-transistor functionality can be thus achievedin nonballistic channels with relatively low SOC, relaxing two majorconstraints of the original sFET proposal.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2-DIMENSIONAL ELECTRONS; ORBIT INTERACTION; PRECESSION; RELAXATION; TRANSPORT; spin-field-effect transistor (sFET); spin-orbitcoupling; spin injection; spin diffusion; spin manipulation |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Feb 2024 07:20 |
| Last Modified: | 28 Feb 2024 07:20 |
| URI: | https://pred.uni-regensburg.de/id/eprint/59155 |
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