Mayer, Dennis and Knothe, Angelika (2023) Tuning-Confined States and Valley G-Factors by Quantum Dot Design in Bilayer Graphene. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 260 (12): 2300395. ISSN 0370-1972, 1521-3951
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Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their properties is required. Herein, a large-scale numerical characterization of confined quantum states in bilayer graphene dots is performed over an extensive range of gate-tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. The dot states' orbital degeneracy, wave function distribution, and valley g-factor are established and the parametric dependencies to achieve different regimes are provided. It is found that the dot states are highly susceptible to gate-dependent confinement and material parameters, enabling efficient tuning of confined states and valley g-factor modulation by quantum dot design. Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. The authors perform large-scale numerical characterization of confined quantum states in bilayer graphene dots over an extensive parameter range. The dot states are highly susceptible to gate-dependent confinement and material parameters, enabling tuning of confined states and valley g-factor modulation by quantum dot design.image (c) 2023 WILEY-VCH GmbH
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BERRY PHASE; SPIN; MANIPULATION; SYMMETRY; bilayer graphene; g-factor modulation; quantum dots; valleytronics |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Mar 2024 09:00 |
| Last Modified: | 05 Mar 2024 09:00 |
| URI: | https://pred.uni-regensburg.de/id/eprint/59275 |
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