Pielmeier, Florian and Landolt, Gabriel and Slomski, Bartosz and Muff, Stefan and Berwanger, Julian and Eich, Andreas and Khajetoorians, Alexander A. and , Jens and Aliev, Ziya S. and Babanly, Mahammad B. and Wiesendanger, Roland and Osterwalder, Juerg and Chulkov, Evgueni V. and Giessibl, Franz J. and Dil, J. Hugo (2015) Response of the topological surface state to surface disorder in TlBiSe2. NEW JOURNAL OF PHYSICS, 17: 023067. ISSN 1367-2630,
Full text not available from this repository. (Request a copy)Abstract
Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands cannot be regarded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as direct evidence of its topological self-protection and shows the robust nature of the Dirac cone-like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe2.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | PHASE-TRANSITION; INSULATORS; TEXTURE; BI2SE3; GROWTH; topological insulator; topological surface state; scanning tunneling microscopy; atomic force microscopy; angle resolved photoemission spectroscopy |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Franz J. Giessibl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Jul 2019 09:44 |
| Last Modified: | 24 Jul 2019 09:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/5946 |
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