Hubmann, S. and Di Battista, G. and Dmitriev, I. A. and Watanabe, K. and Taniguchi, T. and Efetov, D. K. and Ganichev, S. D. (2023) Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene. 2D MATERIALS, 10 (1): 015005. ISSN 2053-1583,
Full text not available from this repository. (Request a copy)Abstract
We report on observation of the infrared photoresistance of twisted bilayer graphene (tBLG) under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of tBLG. It is shown that the observed photoresistance is well captured by a bolometric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate voltages. We establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in tBLG.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CORRELATED STATES; MOIRE BANDS; ANGLE; SUPERCONDUCTIVITY; photoresistance; twisted bilayer graphene; infrared; temperature; bolometric; heating |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 16 Mar 2024 15:11 |
| Last Modified: | 16 Mar 2024 15:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/60262 |
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