Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking

Chen, Xiangning and Zollner, Klaus and Moulsdale, Christian and Fal'ko, Vladimir I. and Knothe, Angelika (2023) Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking. PHYSICAL REVIEW B, 107 (12): 125402. ISSN 2469-9950, 2469-9969

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Abstract

We theoretically investigate three-dimensional (3D) layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Using first-principles calculations to parametrize the low-energy Hamiltonians we establish the most likely electronic phases. Our results demonstrate that 3D crystals stacked from individual 2D materials represent a synthetic materials class with emergent properties different from their constituents.

Item Type: Article
Uncontrolled Keywords: VAN; CRYSTALS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 19 Mar 2024 09:40
Last Modified: 19 Mar 2024 09:40
URI: https://pred.uni-regensburg.de/id/eprint/60325

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