Optoelectronic transport through quantum Hall edge states

Kastl, C. and Stallhofer, M. and Schuh, D. and Wegscheider, W. and Holleitner, A. W. (2015) Optoelectronic transport through quantum Hall edge states. NEW JOURNAL OF PHYSICS, 17: 023007. ISSN 1367-2630,

Full text not available from this repository. (Request a copy)

Abstract

We use GaAs-based quantum point contacts as mesoscopic detectors to locally analyze the flow of photogenerated electrons in a two-dimensional electron gas (2DEG) at perpendicular, quantizing magnetic fields. The 2DEG is formed within a quantum well of a doped GaAs/AlGaAs-hetero-structure. We find an optoelectronic signal along the lateral boundaries of the 2DEG, which is consistent with an optically induced quantum transport through quantum Hall edge channels. We demonstrate that photogenerated electrons can be directly injected into an edge channel, transported across several tens of micrometers and read-out on-chip by the quantum point contact.

Item Type: Article
Uncontrolled Keywords: 2-DIMENSIONAL ELECTRON-GAS; POINT CONTACTS; SPIN HALL; REGIME; CHANNELS; CONDUCTANCE; MICROSCOPY; CURRENTS; DENSITY; WELLS; quantum hall edge states; quantum points contacts; optolectronics
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Depositing User: Dr. Gernot Deinzer
Date Deposited: 25 Jul 2019 09:18
Last Modified: 25 Jul 2019 09:18
URI: https://pred.uni-regensburg.de/id/eprint/6074

Actions (login required)

View Item View Item