Boeckendorf, Tim and Kirschbaum, Jan and Kipke, Felix and Bougeard, Dominique and Hansen, John Lundsgaard and Larsen, Arne Nylandsted and Posselt, Matthias and Bracht, Hartmut (2024) Experimental and theoretical studies on self-diffusion in amorphous germanium. AIP ADVANCES, 14 (6): 065129. ISSN 2158-3226
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Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 degrees C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline germanium-on-insulator structure by means of molecular beam epitaxy and subsequently amorphized by self-ion implantation. After heat treatment, the diffusional broadening of the isotope structure is measured with time-of-flight secondary ion mass spectrometry. The temperature dependence of self-diffusion is accurately described by the Arrhenius equation with the activation enthalpy Q = (2.21 +/- 0.12) eV and pre-exponential factor D-0 = (2.32(-2.10)(+20.79)) cm(2) s(-1). The activation enthalpy equals the activation enthalpy of solid phase epitaxial recrystallization (SPER). This agreement suggests that self-diffusion in amorphous germanium is similar to SPER, also mainly mediated by local bond rearrangements. Classical molecular dynamics simulations with a modified Stillinger-Weber-type interatomic potential yield results that are consistent with the experimental data and support the proposed atomic mechanism.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CRYSTALLIZATION; KINETICS; SILICON |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 30 Oct 2025 06:49 |
| Last Modified: | 30 Oct 2025 06:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/64690 |
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