Neul, Malte and Sprave, Isabelle and Diebel, Laura K. and Zinkl, Lukas G. and Fuchs, Florian and Yamamoto, Yuji and Vedder, Christian and Bougeard, Dominique and Schreiber, Lars R. (2024) Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K. PHYSICAL REVIEW MATERIALS, 8 (4): 043801. ISSN 2475-9953,
Full text not available from this repository. (Request a copy)Abstract
Si/SiGe heterostructures are of high interest for high-mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise, and valley splitting, these heterostructures require Ge concentration profiles close to monolayer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room temperature. We measure the electron mobility and contact resistance of laser-annealed Hall bars at temperatures below 4 . 2 K and obtain values similar or superior to that of a globally annealed reference sample. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 17 Nov 2025 09:56 |
| Last Modified: | 17 Nov 2025 09:56 |
| URI: | https://pred.uni-regensburg.de/id/eprint/65051 |
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