Sadovyi, Bohdan and Sadovyi, Petro and Nikolenko, Andrii and Strelchuk, Viktor and Turko, Borys and Eliyashevskyy, Yuriy and Yahniuk, Ivan and Marocko, Marina and Eroms, Jonathan and Petrusha, Igor and Krukowski, Stanislaw and Porowski, Sylwester and Grzegory, Izabella (2025) Crystal Growth of hBN from Ni and Ni-Cr Solutions at High N2 pressure. ACS APPLIED MATERIALS & INTERFACES, 17 (46). pp. 63610-63622. ISSN 1944-8244, 1944-8252
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Single crystals of hexagonal BN have been grown from solutions on the surface of Ni-Cr and pure Ni metals under a pressure of N2 gas of 1000-1500 bar. The transparent and colorless hBN crystals obtained in this study exhibited high structural quality and uniformity as confirmed by micro-Raman mapping, showing less than 8 cm-1 widths of the high-frequency E 2g Raman peaks corresponding to the intralayer vibrations of the B and N atoms in hBN. Optical absorption measurements indicated the indirect character of electronic transitions in bulk hBN. Due to the solubility of nitrogen increased by a factor of 30-40 by compression, it was possible to grow significantly thicker (up to 30 mu m) hBN crystals from pure Ni solvent than by a similar approach at atmospheric pressure. The addition of chromium to the solution seriously disrupted the hBN crystallization process, as at elevated N2 pressure efficient synthesis of CrN occurred at the same time. The results of the crystallization experiments are discussed in the context of the thermodynamic properties of III-N compounds and the effect of the metal solvent on the conditions of thermal stability of BN concerning its components. To further assess the quality of the crystals and evaluate their potential for applications, thin flakes exfoliated from the grown hBN crystals were applied in graphene-based devices. Remarkably high carrier mobility, exceeding 21.2 m2<middle dot>V-1<middle dot>s-1 at 230 K for both electrons and holes, was observed in magnetotransport studies on hBN-encapsulated graphene transistors.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HEXAGONAL BORON-NITRIDE; ABSORPTION-EDGE; PHASE-DIAGRAM; NITROGEN; hexagonal boron nitride; solution growth; highpressure; 2D materials; 2D electronic devices |
| Subjects: | 500 Science > 530 Physics 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Jonathan Eroms |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 31 Mar 2026 04:32 |
| Last Modified: | 31 Mar 2026 04:32 |
| URI: | https://pred.uni-regensburg.de/id/eprint/67344 |
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