Trion valley coherence in monolayer semiconductors

Hao, Kai and Xu, Lixiang and Wu, Fengcheng and Nagler, Philipp and Tran, Kha and Ma, Xin and Schueller, Christian and Korn, Tobias and MacDonald, Allan H. and Moody, Galan and Li, Xiaoqin (2017) Trion valley coherence in monolayer semiconductors. 2D MATERIALS, 4 (2): 025105. ISSN 2053-1583,

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Abstract

The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of this quantum degree of freedom. The charged exciton (trion) in TMDs is an intriguing alternative to the neutral exciton for control of valley pseudospin because of its long spontaneous recombination lifetime, its robust valley polarization, and its coupling to residual electronic spin. Trion valley coherence has however been unexplored due to experimental challenges in accessing it spectroscopically. In this work, we employ ultrafast 2D coherent spectroscopy to resonantly generate and detect trion valley coherence in monolayer MoSe2 demonstrating that it persists for a few-hundred femtoseconds. We conclude that the underlying mechanisms limiting trion valley coherence are fundamentally different from those applicable to exciton valley coherence.

Item Type: Article
Uncontrolled Keywords: TRANSITION-METAL DICHALCOGENIDES; FOURIER-TRANSFORM SPECTROSCOPY; CHARGED EXCITONS; WSE2; MOS2; RELAXATION; DYNAMICS; SPIN; transition-metal dichalcogenides; valley coherence; trions; two-dimensional coherent spectroscopy
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Dec 2018 13:10
Last Modified: 28 Feb 2019 10:29
URI: https://pred.uni-regensburg.de/id/eprint/811

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