Raja, Archana and Chaves, Andrey and Yu, Jaeeun and Arefe, Ghidewon and Hill, Heather M. and Rigosi, Albert F. and Berkelbach, Timothy C. and Nagler, Philipp and Schueller, Christian and Korn, Tobias and Nuckolls, Colin and Hone, James and Brus, Louis E. and Heinz, Tony F. and Reichman, David R. and Chernikov, Alexey (2017) Coulomb engineering of the bandgap and excitons in two-dimensional materials. NATURE COMMUNICATIONS, 8: 15251. ISSN 2041-1723,
Full text not available from this repository. (Request a copy)Abstract
The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | DER-WAALS HETEROSTRUCTURES; SINGLE-LAYER MOS2; MONOLAYER WSE2; SEMICONDUCTOR; WS2; PHOTOLUMINESCENCE; HETEROJUNCTIONS; TRANSITIONS; GRAPHITE; CRYSTALS; |
| Subjects: | 500 Science > 530 Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:10 |
| Last Modified: | 25 Feb 2019 12:13 |
| URI: | https://pred.uni-regensburg.de/id/eprint/897 |
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