Pereyra, Pedro and Weiss, Dieter (2014) Exchange energy and impurity band effects in the I-V characteristics of (Ga,Mn)As/GaAs spin injectors. PHYSICAL REVIEW B, 90 (24): 245310. ISSN 2469-9950, 2469-9969
Full text not available from this repository. (Request a copy)Abstract
A different approach to calculate the I-V characteristics of p(+)(Ga,Mn)As/n(+)GaAs spin injectors is presented. The vanishing of the spin-extraction transmission coefficients at the spin-split valence-band edges leads us to predict a dip or plateau in the I-V characteristics of this kind of diodes. We show that this minimum, or the inflection point, shifts with the exchange energy. Within this approach and using Kane-like densities of states with a detached impurity band, and exchange energies reported in the literature, excellent agreement is found with observed low-bias features of I-V characteristics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Aug 2019 08:05 |
| Last Modified: | 05 Aug 2019 08:05 |
| URI: | https://pred.uni-regensburg.de/id/eprint/9026 |
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