Furthmeier, Stephan and Dirnberger, Florian and Hubmann, Joachim and Bauer, Benedikt and Korn, Tobias and Schueller, Christian and Zweck, Josef and Reiger, Elisabeth and Bougeard, Dominique (2014) Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires. APPLIED PHYSICS LETTERS, 105 (22): 222109. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We present a combined photoluminescence and transmission electron microscopy study of single GaAs nanowires. Each wire was characterized both in microscopy and spectroscopy, allowing a direct correlation of the optical and the structural properties. By tuning the growth parameters, the nanowire crystal structure is optimized from a highly mixed zincblende-wurtzite structure to pure wurtzite. We find the latter one to be stacking-fault-free over nanowire lengths up to 4.1 mu m. We observe the emission of purely wurtzite nanowires to occur only with polarization directions perpendicular to the wurtzite (c) over cap -axis, as expected from the hexagonal unit cell symmetry. The free exciton recombination energy in the wurtzite structure is 1.518 eV at 5K with a narrow linewidth of 4meV. Most notably, these pure wurtzite nanowires display long carrier recombination lifetimes of up to 11.2 ns, exceeding reported lifetimes in bulk GaAs and state-of-the-art 2D GaAs/AlGaAs heterostructures. (C) 2014 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | III-V NANOWIRES; OPTICAL-PROPERTIES; ZINCBLENDE; GROWTH; PHOTOLUMINESCENCE; PHASE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Aug 2019 09:14 |
| Last Modified: | 07 Aug 2019 09:14 |
| URI: | https://pred.uni-regensburg.de/id/eprint/9129 |
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