Spectral Features of the Photoresponse of Structures with Silicon Nanoparticles

Ken, O. S. and Andronikov, D. A. and Yavsin, D. A. and Kukin, A. V. and Danilov, S. N. and Smirnov, A. N. and Sreseli, O. M. and Gurevich, S. A. (2014) Spectral Features of the Photoresponse of Structures with Silicon Nanoparticles. SEMICONDUCTORS, 48 (11). pp. 1518-1524. ISSN 1063-7826, 1090-6479

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Abstract

The spectral characteristics of the photoresponse of heterostructures with layers of densely packed amorphous silicon nanoparticles produced by laser electrodispersion are studied. The structures exhibit rectifying properties. Annealing in air results in the appearance of silicon oxide nanoparticles in the layers and, in addition, there occurs partial crystallization of the nanoparticles. The spectral characteristics of the photoresponse of the heterostructures have a number of specific features. Compared with standard silicon photodiodes, the sensitivity spectra of the structures under study are shifted to shorter wavelengths, with the shift becoming more pronounced upon annealing. The structures with an annealed layer of nanoparticles exhibit sensitivity in the spectral range 350-600 nm, which exceeds by more than an order of magnitude the sensitivity of unannealed structures. This effect can be attributed to a transistor-like effect in the structure.

Item Type: Article
Uncontrolled Keywords: PHOTOCURRENT; NANOCLUSTERS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 08 Aug 2019 14:55
Last Modified: 08 Aug 2019 14:55
URI: https://pred.uni-regensburg.de/id/eprint/9274

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