Nirschl, Anna and Gomez-Iglesias, Alvaro and Sabathil, Matthias and Hartung, Georg and Off, Juergen and Bougeard, Dominique (2014) Quantitative modeling of the temperature-dependent internal quantum efficiency in InGaN light emitting diodes. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211 (11). pp. 2509-2513. ISSN 1862-6300, 1862-6319
Full text not available from this repository. (Request a copy)Abstract
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for quantitative predictions of IQEs including optimizations regarding spatial carrier distributions at room temperature. At elevated temperatures, a moderate increase of the Auger coefficient gives a more precise agreement between experiment and simulations. The results show that the model is suitable to quantitatively predict the IQE for different structures and temperatures.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | RECOMBINATION; NANOSTRUCTURES; DROOP; WELLS; GaN; InGaN; internal quantum efficiency; light emitting diodes |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 08 Aug 2019 09:11 |
| Last Modified: | 08 Aug 2019 09:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/9288 |
Actions (login required)
 |
View Item |
