Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

Kozlov, D. A. and Kvon, Z. D. and Mikhailov, N. N. and Dvoretskii, S. A. and Weishaeupl, S. and Krupko, Y. and Portal, J. -C. (2014) Quantum Hall effect in HgTe quantum wells at nitrogen temperatures. APPLIED PHYSICS LETTERS, 105 (13): 132102. ISSN 0003-6951, 1077-3118

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Abstract

We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors nu of 1 and 2. This indicates that the large values of the g-factor (about 30-40) remain unchanged at very strong magnetic fields. (C) 2014 AIP Publishing LLC.

Item Type: Article
Uncontrolled Keywords: ;
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 13 Aug 2019 11:44
Last Modified: 13 Aug 2019 11:48
URI: https://pred.uni-regensburg.de/id/eprint/9527

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