Fractional quantum Hall effect in a dilute magnetic semiconductor

Betthausen, C. and Giudici, P. and Iankilevitch, A. and Preis, C. and Kolkovsky, V. and Wiater, M. and Karczewski, G. and Piot, B. A. and Kunc, J. and Potemski, M. and Wojtowicz, T. and Weiss, D. (2014) Fractional quantum Hall effect in a dilute magnetic semiconductor. PHYSICAL REVIEW B, 90 (11): 115302. ISSN 1098-0121, 1550-235X

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Abstract

We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd1-xMnxTe. The presence of magnetic impurities results in a giant Zeeman splitting leading to an unusual ordering of composite fermion Landau levels. In experiment, this results in an unconventional opening and closing of fractional gaps around the filling factor nu = 3/2 as a function of an in-plane magnetic field, i.e., of the Zeeman energy. By including the s-d exchange energy into the composite Landau level spectrum the opening and closing of the gap at filling factor 5/3 can be modeled quantitatively. The widely tunable spin-splitting in a diluted magnetic 2DES provides a means to manipulate fractional states.

Item Type: Article
Uncontrolled Keywords: COMPOSITE FERMIONS; SPIN;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Aug 2019 09:38
Last Modified: 14 Aug 2019 09:38
URI: https://pred.uni-regensburg.de/id/eprint/9570

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