Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown Sb2Te3- and Bi2Te3-Based Topological Insulators

Olbrich, P. and Golub, L. E. and Herrmann, T. and Danilov, S. N. and Plank, H. and Bel'kov, V. V. and Mussler, G. and Weyrich, Ch. and Schneider, C. M. and Kampmeier, J. and Gruetzmacher, D. and Plucinski, L. and Eschbach, M. and Ganichev, S. D. (2014) Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown Sb2Te3- and Bi2Te3-Based Topological Insulators. PHYSICAL REVIEW LETTERS, 113 (9): 096601. ISSN 0031-9007, 1079-7114

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Abstract

We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the "symmetry filtration" the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.

Item Type: Article
Uncontrolled Keywords: SURFACE-STATE; GRAPHENE; BI2SE3; CONE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 30 Aug 2019 12:00
Last Modified: 30 Aug 2019 12:00
URI: https://pred.uni-regensburg.de/id/eprint/9727

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